3D Analysis Technique for Defects in Semiconductor Device
نویسندگان
چکیده
منابع مشابه
Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures
Electron Channeling Contrast Imaging (ECCI) [1] offers the ability to perform fast and non-destructive analysis of the type and density of extended defects, such as threading dislocations (TDs) and stacking faults (SFs) penetrating as-grown semiconductor thin film surfaces and device structures. Using a conventional scanning electron microscope (SEM) chamber with only a few special requirements...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 2007
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.46.795